^(60)Co照射正电子湮没研究YAP晶棒芯部固有结构缺陷  

Study on the intrinsic structure defects in core location of YAP crystal stick by means of ^(60)Co irradiading and PAT

作　　者：史子康[1] 吴锦华[1] 

机构地区：[1]中国科学院福建物质结构研究所

出　　处：《激光技术》1992年第6期342-349,共8页Laser Technology

摘　　要：本文通过^(60)Co 的γ照射及正电子湮没寿命谱学测量,研究了1%Nd:YAP晶棒芯部的固有结构缺陷及其“浸泡”前后的变化规律,说明了“浸泡”工艺是改善芯部缺陷的一种好手段。通过1100℃ H_2中10h 退火实验,虽然有褪白效应,然而,副效应是大的。In this paper,the intrinsic structure defects of 1% Nd: YAP crystal core have been researched by using ^(60)Co irradiation and spectrum measurement of positive electron life,named“immersion”. The research results show that the“immersion”technique is a good method to improve structure defects of Nd:YAP crystal core.Annea- ling in 1100 hydrogen atmosphere for 10h has fade function,but addi- tional action is permitted not to neglect.

关 键 词：湮没 YAP晶棒 芯部结构 晶体缺陷 

分 类 号：O77[理学—晶体学]