多孔硅与聚甲基丙烯酸甲酯复合光致发光特性研究  

Research on photoluminescence properties of porous silicon coated with a PMMA polymer film

作　　者：赵毅[1] 杨德仁[1] 周成瑶[1] 谢荣国[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《功能材料与器件学报》2003年第2期170-174,共5页Journal of Functional Materials and Devices

摘　　要：多孔硅与有机材料复合可以改善多孔硅的光致发光特性。用化学腐蚀的方法制备了多孔硅,通过不同方法实现了多孔硅与聚甲基丙烯酸甲酯(PMMA)的复合。实验结果表明,用旋涂法实现的PMMA固化后再与多孔硅复合而制得的样品的结果最好,它与原始的多孔硅样品相比,发光峰发生了蓝移而且发光强度下降很小。PMMA层有限的厚度和PMMA对多孔硅表面的保护使复合后发光强度下降很小。制备的多孔/PMMA复合体系的发光强度几乎不随时间而下降,这可能是由于PMMA有效地隔绝多孔硅与空气的接触,保护了多孔硅的表面,不会产生更多的悬挂键。The photoluminescence of porous silicon (PS) can be improved by coated with organic film. The PS samples were prepared by chemical etching. The PMMA polymer film was precipitated on the surface of PS with different methods. Photoluminescence of porous silicon and PS/PMMA composites was investigated. The result shows that the spin coating method is better relatively. Obvious blue shift of PL is found in PL for the PS/PMMA composite prepared with spin-coating. Compared to the original PS sample, the luminescence-quenching is greatly decreased for PS/PMMA composite due to the pre- vention of PS layer by coated with PMMA film and the PMMA modification of dielectrical penetrability of the medium in quantum threads. The intensity of PL of the composition doesn't decrease with time because PMMA polymer film can protect PS surface from atmospheric vapor and gas.

关 键 词：多孔硅 聚甲基丙烯酸甲酯 光致发光 复合材料 旋涂法 发光强度 

分 类 号：TN383.2[电子电信—物理电子学] TB332[一般工业技术—材料科学与工程]