InSb电荷注入成像阵列  

InSb Charge-Injection Imaging Array Technology

作　　者：韩建忠 

机构地区：[1]华北光电所,北京100015

出　　处：《激光与红外》1992年第4期32-35,共4页Laser & Infrared

摘　　要：采用InSb MIS技术已成功研制出线列和面阵型自扫描3～5μm红外焦平面器件。本文介绍了InSb MIS结构理论和界面电学特性分析;结构设计和工艺实现途径。介绍了器件性能结果。Both linear and area IRFPA have been fabricated successfully based on InSb MIS technology. InSb MIS construction theory interface Characteristics, device design sad fabrications are briefly reviewed tn this paper. The performance results are also presented.

关 键 词：INSB CID 焦平面器件 电荷 

分 类 号：TN21[电子电信—物理电子学]