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机构地区:[1]Electrical Engineering Department,Xi’an Jiaotong University,Xi’an 710049,China
出 处:《Plasma Science and Technology》2003年第3期1811-1814,共4页等离子体科学和技术(英文版)
基 金:The project supported by the National Nature Science Foundation of China(No.10035020)
摘 要:Accurate and reliable triggering is one of the most important issues with high power pseudospark switch, because it not only has an impact on the design of discharge chamber of switch, but also has an influence on the dynamic range of operation voltage, repetition frequencies and lifetime of switch. The unique feature of pseudospark switch is its hollow cathode geometry. The hollow cathode effect produced by the hollow cathode provides the protection of the switch for the triggering unit from erosion by high discharge plasma. In this paper, a zinc oxide (ZnO) surface flashover triggering is presented. This trigger unit possesses an excellent time delay (80 ns - 360 ns) and jitter (20 ns - 50 ns) at the switch voltage of 30 kV - 2 kV. The emitted plasma electron density is high enough to trigger switch reliably down to switch voltage of 440 V.Accurate and reliable triggering is one of the most important issues with high power pseudospark switch, because it not only has an impact on the design of discharge chamber of switch, but also has an influence on the dynamic range of operation voltage, repetition frequencies and lifetime of switch. The unique feature of pseudospark switch is its hollow cathode geometry. The hollow cathode effect produced by the hollow cathode provides the protection of the switch for the triggering unit from erosion by high discharge plasma. In this paper, a zinc oxide (ZnO) surface flashover triggering is presented. This trigger unit possesses an excellent time delay (80 ns - 360 ns) and jitter (20 ns - 50 ns) at the switch voltage of 30 kV - 2 kV. The emitted plasma electron density is high enough to trigger switch reliably down to switch voltage of 440 V.
关 键 词:pseudospark switch(PSS) pulsed power technology semiconductor (ZnO) surface flashover triggering hollow cathode effect
分 类 号:TL503[核科学技术—核技术及应用]
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