中性原子的磁囚禁技术及其最新发展与应用  

Magnetic Traps for Neutral Atoms and Their Recent Developments and Applications

作　　者：胡建军[1] 印建平[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《量子电子学报》2003年第3期257-268,共12页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(批准号:10174050);江苏省教育厅自然科学重点基金(批准号:00KJB140001);江苏省高校青蓝工程新世纪学术带头人培养基金

摘　　要：本文就近二十年来国际上用于三维限制中性原子运动的磁囚禁原理、方案、特点及其最新发展进行了系统介绍与综述。根据构成磁阱的装置大小、磁场特征以及产生磁场方式的不同,可以将囚禁原子的各种磁阱分为宏观静磁囚禁、微观静磁囚禁和微波或交流磁囚禁三大类。最后,文章简单介绍了中性原子磁囚禁技术在玻色-爱因斯坦凝聚(BEC)和原子芯片中的最新应用。In this paper, the basic principles, schemes, characteristics and their recent developments and applications of magnetic traps are reviewed in detail. All these magnetic traps can be divided into three kinds: macroscopic static magnetic trap, microscopic static magnetic trap and microwave or ac magnetic trap, according to the sizes of magnetic-trap devices, the characteristics of magnetic wells and the methods of generating magnetic fields. Finally, some recent applications of magnetic traps in the experiments of Bose-Einstein condensation (BEC) and atomic chip are briefly introduced.

关 键 词：中性原子 磁囚禁技术 玻色-爱因斯坦凝聚 原子芯片 BEC 

分 类 号：O562[理学—原子与分子物理]