量子点量子阱中束缚态的能级结构(英文)  

Structures of the Energy Levels ofthe Bound States in a Quantum Dot Quantum Well

作　　者：张立[1] 谢洪鲸[1] 陈传誉[1] 龚映清 

机构地区：[1]番禺职业技术学院电子与机械系 [2]广州市番禺区市桥镇第二中学物理科组,番禺511400

出　　处：《量子电子学报》2003年第3期338-344,共7页Chinese Journal of Quantum Electronics

基　　金：This work is supported by Guangdong Provincial Natural Science Foundation of China(NO.011835)

摘　　要：在有效质量近似下,考察了一个特殊量子点量子阱体系中的电子与空穴束缚态能级结构,以CdS/HgS和ZnS/CdSe构成的量子点量子阱为例进行了数值计算。结果显示,束缚态的本征能量对量子点量子阱的尺寸依赖曲线存在一些拐点,这一结果与均匀量子点体系明显不同;对某个固定的量子点量子阱结构,随量子数n的增加,CdS/HgS量子点量子阱体系中的束缚电子态的能级间隔不是单调增加的,在某些量子数n处存在峰值,而ZnS/CdSe量子点量子阱体系中的空穴束缚态的能级间隔则是单调增加的,这是由构成量子点量子阱的材料的有效质量比率不同造成的。Under the effective mass approximation, the energy levels for the bound states of electron and hole in a quantum dot quantum well (QDQW) system are investigated. Numeral calculations on CdS/HgS and ZnS/CdSe QDQW are performed. Results reveal that the curves of the dependence of the eigen-energy on the size of the QDQW have some yielding points, which is obviously different from that in homogenous quantum dot, and the intervals of energy levels for electronic states in CdS/HgS QDQW have maximum at some certain quantum numbers n, while those for hole states in ZnS/CdSe QDQW increase monotonously, it is due to the difference of the ratios of the effective mass of the materials synthesized the QDQW.

关 键 词：能级结构 量子点量子阱 束缚态 电子 数值计算 ZnS/CdSe 硫化锌 碲化镉 

分 类 号：O481.1[理学—固体物理]