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作 者:孙建平[1] 吴洪才[1] 刘效增[1] 郑建邦[1] 韦玮[1]
机构地区:[1]西安交通大学电子与信息工程学院光电技术与太阳能研究所,西安710049
出 处:《真空科学与技术》2003年第3期208-211,共4页Vacuum Science and Technology
基 金:国家自然科学基金资助 (No 10 0 75 0 3 8)
摘 要:采用能量为 ( 10~ 35 )keV ,剂量为 ( 3 0× 10 15~ 4 8× 10 17)ions/cm2 的氮离子 (N+)对聚 ( 2 甲氧基 5 辛氧基 )对苯乙炔 (PMOCOPV)进行离子注入改性。PMOCOPV薄膜的电导率随注入离子能量和剂量的增加而迅速提高。当注入N+的能量为35keV ,剂量为 4 8× 10 17ions/cm2 时 ,PMOCOPV薄膜的电导率为 0 0 96S/cm ,比本征态的电导率提高了 7个数量级。通过超高阻测试仪研究了PMOCOPV薄膜表面电导率与温度的关系 ,发现N+注入PMOCOPV薄膜的电导活化能为 0 15 6eV。离子注入PMOCOPV薄膜的电导率的环境稳定性优于I2 和FeCl3 掺杂的PMOCOPV。对离子注入PMOCOPV薄膜的导电机理进行了初步探讨。The electrical properties of poly (2 methoxy 5 octyloxy) 1,4 phenylene vinylene (PMOCOPV) films were successfully improved by nitrogen ion implantation.The energy and dose of the nitrogen ions range from (10 to 35)keV and (3.0×10 15 to 4.8×10 17 )ions/cm 2,respectively.We found that conductivity of the films increases sharply with the increase of the energy and dose of the implanted ions.For example,ion implantation was performed with an energy of 35 keV,at a dose of 4.8×10 17 ions/cm 2,the surface conductivity of the PMOCOPV films is 7 order of magnitude higher than that of the control sample.Influence of temperature on surface conductivity of the film was also studied and the conductive activation energy was found to be 0.156 eV.The environmental stability of the ion implanted films is much better than that of the films chemically doped with I 2 and FeCl 3.Possible mechanism responsible for conductivity increase of the film modified by nitrogen ion implantation was also tentatively discussed.
关 键 词:离子注入聚(2-甲氧基-5-辛氧基)对苯乙炔 电导率 电导活化能
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