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机构地区:[1]清华大学计算机科学与技术系,北京100084
出 处:《计算物理》1992年第3期285-292,共8页Chinese Journal of Computational Physics
基 金:国家自然科学基金
摘 要:本文采用边界元素法(BEM)计算任意多边形的二维电阻和复杂结构的二维电容。同一计算程序既能计算电阻又能计算电容,而只需作微小不同的后处理。对于边界元素法,由于仅需计算边界上的积分方程,其离散边界上的网格点数大大少于有限差分法及有限元素法所需的网格点数,使CPU执行时间显著减少,并简化了网格划分工作。此外,计算结果还指出边界元素法具有精度高和处理复杂边界能力强的优点。A new algorithm based on the Boundary Element Method (BeM )is employed to calculate two-dimensional multi -terminal resistance of irregular polygons and two-dimensional capacitance with complex structures. The same calculation program can be used for computation of both resistance and capacitance, only the post -process programs are different. For BEM only the integral equation on the boundary of the solved domain needs to be calculated. The grid number on the boundary for BEM is much smaller than the mesh number on the domain for both the finite difference Method and the finite element method. It causes remarkable reduction of execution CPU time and simplification of the grid generation. The computational results indicate that the advantage of BEM is high precision and very powerful for treatment of complex boundaries.
分 类 号:TN402[电子电信—微电子学与固体电子学]
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