射频Si/SiGe/Si HBT的研究  

Studies on RF Si/SiGe/Si HBT

作　　者：廖小平[1] 殷刚毅[1] 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《电子器件》2003年第2期136-138,共3页Chinese Journal of Electron Devices

基　　金：东南大学科学基金资助

摘　　要：在Si/SiGe/Si HBT与Si工艺兼容的研究基础上,对射频Si/SiGe/Si HBT的射频特性和制备工艺进行了研究,分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si/SiGe/Si HBT的特征频率f_τ和最高振荡频率f_(max)的关系,成功地制备了f_τ为2.5GHz、f_(max)为2.3GHz的射频Si/SiGe/Si HBT,为具有更好的射频性能的Si/SiGe/Si HBT的研究建立了基础。Based on the process which the Si/SiGe/Si HBT is compatibility with Si, the researches on RF Si/SiGe/Si HBT's RF characterization and its fabrication have been done. The dependence of device characterization frequency fT and maximum oscillation frequency fmax on the key parameters: parasitical resistances and capacitances were analyzed, and these parameters were decided by device construction. RF Si/SiGe/Si HBT is fabricated, whose fT reaches 2.5GHz and ft reaches 2.3GHz. Based on above researches, the better RF Si/SiGe/Si HBT will be made.

关 键 词：Si/SiGe/SiHBT 特征频率fT 最高振荡频率fmax 

分 类 号：TN325.2[电子电信—物理电子学]