优质DKDP晶体的点状籽晶生长及其表征研究  

Study on the Growth with Point Seed and Characterization of High Quality DKDP Crystal

作　　者：刁立臣[1] 常新安[1] 臧和贵[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《人工晶体学报》2003年第1期35-40,共6页Journal of Synthetic Crystals

基　　金：北京市教委科技发展计划项目 ( 0 1KJ 0 12 ) ;北京市自然科学基金 ( 2 0 3 2 0 0 5 )资助项目

摘　　要：本文在研究DKDP溶液稳定性的基础上 ,采用Z切点状籽晶 (5mm× 5mm× 3mm)生长了多块DKDP晶体 ,在2 5 0ml和 10 0 0ml生长瓶中分别获得了在 [10 0 ]和 [0 0 1]向生长速度可达到 3mm/d和 4 5mm/d的点状籽晶生长优质DKDP晶体的生长条件。通过等离子体发射光谱 (ICP)和紫外可见光谱分析发现DKDP晶体柱面的金属离子含量比锥面高 ,柱面的紫外可见吸收比锥面大。性能测试结果表明 ,点状籽晶全方位生长的DKDP晶体的激光损伤阈值约为 5GW/cm2 、半波电压约为 4kV、动态消光比约为 16 0 0∶1。DKDP crystals were grown by the Z cut point seed (5mm×5mm×3mm) on the basis of the study on the stability of DKDP solution. The high quality DKDP crystal growth conditions have been achieved in glass crystallizer of 250ml and 1000ml,the growth rates reach 3mm/d and 4.5 mm/d in the and direction respectively. The ICP and UV VIS transmission spectra analyses show that concentration of metal impurities on the (100) face is higher than that on the (110) face and absorption on the (100) face is bigger than that on the (110) face. The results of property test of DKDP crystal grown on point seed show that laser damage threshold is about 5GW/cm 2,half wave voltage about 4kV,extinction ratio about 1600∶1. The obvious difference is not found between DKDP crystal grown by traditional technique and that grown by point seed growth technique.

关 键 词：DKDP晶体 点状籽晶 晶体生长 表征 溶液稳定性 性能 

分 类 号：O782.1[理学—晶体学]