强磁体磁阻薄膜的研制  

Research of Magneto Resistive Layer

作　　者：吴东阁[1] 王晓雯[1] 李绍恒[1] 

机构地区：[1]沈阳仪表科学研究院,辽宁沈阳110043

出　　处：《仪表技术与传感器》2003年第6期10-11,共2页Instrument Technique and Sensor

摘　　要：强磁体薄膜是制造强磁体磁阻器件的基础,也是制造强磁体磁阻器件的最关键的一道工艺,对于制备低功耗的强磁体磁阻器件,要求薄膜厚度很薄,约40nm,这对薄膜的制备工艺提出了更高的要求。本文主要论述了用真空蒸镀的方法制取低功耗强磁体磁阻器件用的强磁体薄膜的理论基础,并在所用材料、蒸镀方法、材料的配比、蒸发基底温度、热处理温度、膜层厚度等对薄膜的磁各向异性(△ρ/ρ_0)的影响进行了详细阐述。Magnetoresistive layer is the base of magnetoresistive component and the most important technics for produced low power consumption magnetoresistive conponent, the thickness of layer should be very thin( approx. 400nm), It requires higher items for the technics of magnetoresistive layer. The paper describes the academic base of magnetoresistive layer for produced low power consumption magnetoresistive conponent by vacuum evaporation. It also describes the effect of magnetoresistivity (△ρ/ρo)by the materials, the method of evaporation, materials' proportion, temperature of substrate, temperature of thermal treatment, thickness of layer and so on.

关 键 词：强磁体磁阻薄膜 真空蒸镀 热处理温度 结晶化处理 研制 强磁体磁阻传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]