Nd∶GdVO_4单晶的生长、位错和形貌  

Nd∶GdVO_4 Crystal Growth, Dislocation and Crystallography

作　　者：马会龙[1] 臧竞存[1] 刘燕行[2] 邹玉林[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022 [2]北京工业大学环境与能源工程学院,北京100022

出　　处：《中国稀土学报》2003年第3期355-358,共4页Journal of the Chinese Society of Rare Earths

基　　金：北京市教委资助项目(OOKJ 037)

摘　　要：用提拉法生长出掺钕钒酸钆(Nd∶GdVO4)单晶,并且采用化学浸蚀法在偏光显微镜下观察了位错蚀坑,测定了(100)面晶体位错密度为600个/mm2。观察了不同提拉方向的晶体生长形貌,可采用简单光学方法确定晶体方向。Single crystals of Nd∶GdVO4 were grown by the Czochralski method from melts. Chemical etching techniques were used to reveal the dislocation structure of crystals. An average basal dislocation density of (100) face is 600 pits·mm-2. Thus crystallomorphology can be used to determine crystal orientation accurately by simple optical method.

关 键 词：无机非金属材料 Nd:GdVO4单晶 化学浸蚀 位错 晶体形貌 稀土 

分 类 号：O782.5[理学—晶体学]