检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:周玉祥[1] 周德瑞[1] 徐朝鹏[2] 王锐[1]
机构地区:[1]哈尔滨工业大学应用化学系,哈尔滨150001 [2]哈尔滨工业大学光电信息中心
出 处:《人工晶体学报》2003年第3期247-251,共5页Journal of Synthetic Crystals
基 金:国家 8 63项目 ( 863 2 0 0 1AA3 13 0 4);973项目 ( 973G19990 3 3 0 );黑龙江省科学基金 (A0 1- 0 3 )资助
摘 要:在LiNbO3 中掺进ZnO和In2 O3 以Czochralski技术生长Zn∶In∶LiNbO3 晶体。采用光斑畸变法测试Zn∶In∶LiNbO3晶体抗光损伤能力。Zn∶In∶LiNbO3 晶体抗光损伤能力比LiNbO3 晶体提高二个数量级。测试晶体的红外光谱 ,Zn∶In∶LiNbO3 晶体吸收峰的位置相对LiNbO3 晶体发生紫移 ,且随着Zn2 + 和In3 + 浓度增加紫移程度增加。晶体的倍频性能(相位匹配温度和倍频转换效率 )研究表明 :Zn∶In∶LiNbO3 晶体相位匹配温度在室温附近。并研究了Zn∶In∶LiNbO3晶体抗光损伤机理和OH-吸收峰紫移的机理。Doping ZnO and In 2O 3 into LiNbO 3,Zn∶In∶LiNbO 3 crystals were grown by Czochralski method.The photodamage resistance ability of the crystals was measured by facula distortion method.It was shown that the photodamage resistance ability of Zn∶In∶LN crystals is two orders of magnitude higher than that of pure LN crystal.The infrared spectra of the crystals were measured.The result showed that the situation of OH - absorption peak with Zn∶In∶LiNbO 3 crystal is shifted to UV edge compared with LiNbO 3 crystal and the shift degree to UV edge is improved with the concentration of Zn 2+ and In 3+ ions increased.The second harmonic generation (SHG) properties(phase matching temperature and double frequency converting efficiency) of Zn∶In∶LN crystals were investigated.It was shown that the phase matching temperature of the crystal is near room temperature.The enhancement mechanism of the photodamage resistance ability of Zn∶In∶LiNbO 3 and the shift to UV edge of OH - absorption peak was also studied.
关 键 词:Zn:In:LiNbO3晶体 抗光损伤性能 倍频性能 光斑畸变法
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.222