量子阱红外探测器能带结构的计算  

Calculation of the Band Structures for the Quantum Well InfraredDetectors

作　　者：连洁[1] 王青圃[1] 程兴奎[2] 李静[1] 姜军[3] 

机构地区：[1]山东大学信息科学与工程学院,山东济南250100 [2]山东大学物理与微电子学院,山东济南250100 [3]青岛大学机电工程学院,山东青岛266000

出　　处：《光电子．激光》2003年第7期672-674,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(69976016);山东省自然科学基金资助项目(Y98G11107);教育部博士点研究基金资助项目(20020422048)

摘　　要：利用电子波在阱与垒的界面上的反射及干涉效应,计算了量子阱红外探测器(QWIP)的能带结构,并对其适用性进行了分析和讨论。通过与K P模型比较发现,本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下,用两种方法计算得到的AlGaAs/GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明,在较宽的范围内,本方法对QWIP能带结构的计算是适用且简便的。The energy band structures of the quantum well infrared photodetector (QWIP) were calculated based on the interference and reflectance of electron wave at interfaces between the wells and the barriers. Compared to the method using K-P model, this method is suitable for calculating the electronic states of the quantum well structure of the wider well (the well-layer width is larger than 4 nm). When the well and barrier thicknesses are invariable, the curves of the peak wavelength as a function of the Al content in the AlGaAs/GaAs material given by the two methods are consistent at x=0.2-0.4. These analyses show that this method is fit for calculating the energy band structure of the QWIP in the large range and easy to be manipulated.

关 键 词：量子阱红外探测器 能带结构 电子波 QWIP 

分 类 号：TN215[电子电信—物理电子学]