聚乙烯咔唑 /铟锡氧化物的界面分析(英文)  

Interface Analysis for the poly(N-vinylcarbazole)/indium-tin-oxide

作　　者：彭应全[1] 郑代顺[1] 张旭[2] 

机构地区：[1]兰州大学物理科学与技术学说,甘肃兰州730000 [2]甘肃联合大学理工学院,甘肃兰州730030

出　　处：《光电子．激光》2003年第7期767-771,共5页Journal of Optoelectronics·Laser

基　　金：ThisworkwassupportedbytheNationalNaturalScienceFoundationofChina(60 0 760 2 3)

摘　　要：用原子力显微镜 (AFM)和X射线光电子能谱 (XPS)研究了真空蒸镀聚乙烯咔唑 (PVK)薄膜的表面形貌和PVK/铟锡氧化物 (ITO)界面电子状态。结果表明 ,PVK分子虽然体积较大 ,但分布较均匀。XPS数据显示 ,在界面处PVK分子骨架和SnO2 分子结构几乎没有发生变化 ,但PVK分子的侧基和In2 O3 分子结构发生了变化 ,因为界面处存在大量的 ,不能用制备过程的空气污染来解释的C O键 ;在界面处 ,In2 O3 分子部分分解 ,所产生O原子替代PVK侧基上的H原子而形成C O键 ;所产生的In原子则扩散至PVK内部。The surface morphology of vacuum vapor deposited poly(N vinylcarbazole)(PVK) thin film and the PVK/indium tin oxide(ITO) interface are studied by using the AFM and XPS respectively.The results showed that PVK molecules are large in size and relative uniform;the backbone of PVK molecules and the structure of SnO 2 are almost unchanged,while the side group of PVK and the structure of In 2O 3 are probably modified in the PVK/ITO interface,because a large amount C O bonds are found in the interface,which cannot be explained by air contamination;Some of the In 2O 3 molecules at the interface are partially decomposed,and the resulting O atoms substitute the H atoms of PVK subgroups and form the C O bonds,and the In atoms diffuse into the PVK bulk.

关 键 词：聚乙烯咔唑 铟锡氧化物 X射线光电子能谱 原子力显微镜 PVK ITO 界面电子状态 

分 类 号：TN304[电子电信—物理电子学] O482.31[理学—固体物理]