高精度Si-V型槽的制备技术研究  

Research on Fabrication Technology of Silicon V-groove with High Precision

作　　者：刘洋[1] 陈才和[1] 丁桂兰[1] 崔宇明[1] 

机构地区：[1]天津大学精密仪器与光电子工程学院光电信息技术科学教育部重点实验室,天津300072

出　　处：《天津大学学报（自然科学与工程技术版）》2003年第4期409-413,共5页Journal of Tianjin University：Science and Technology

基　　金：国家自然科学基金资助项目(49874031).

摘　　要：简要介绍了V型槽设计的原理,并详细讨论了影响V型槽质量的因素.在实验中对其制作工艺技术进行了研究和改进,制作出高质量的V型槽.这些V型槽边缘完整清晰,底部小丘少,已成功地用于国家自然科学基金项目"混合型集成光学加速度地震检波器理论与实验研究"的集成光学器件封装实验中.The designing theory of the Vgroove is briefly introduced and the factors influencing the quality of the Vgroove are analyzed in detail. In experiment, the fabrication technology was studied and improved, by which high quality Vgroove has been successfully fabricated, The Vgroove with clear edges and very few mounds has been applied in the coupling of the integrated optical chip of the 'hybridintegrated optical accelerometer'--a program granted by the National Natural Science Foundation of China.

关 键 词：V型槽 硅 集成光学器件 封装 制备技术 制作工艺 设计原理 钛扩散铌酸锂 

分 类 号：TN256[电子电信—物理电子学]