LDD-CMOS中ESD及其相关机理  

ESD and Its Related Mechanisms on LDD-CMOS

作　　者：马巍[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2003年第8期892-896,共5页半导体学报（英文版）

基　　金：国防预先研究支持项目 (项目编号 :413 0 80 60 3 0 5 )~~

摘　　要：LDD工艺是CMOS集成电路进入亚微米后应用最广泛的技术 ,该技术很好地改善了沟道电场分布 ,避免了在器件漏端的强场效应 ,在可靠性方面明显地提高器件及电路的热载流子寿命 .然而 ,LDD结构的抗ESD的能力却大大降低了 .文中通过实验和分析 ,研究了在ESD过程中 ,LDDgg nMOS器件的Snapback对器件潜在损伤的影响 。LDD is widely used in sub half micrometer CMOS VLSI.Due to its improvement of the distribution of electrical field in channel,the effect of high field near the drain is reduced.Consequently,the life of hot carrier of the circuits and devices is prolonged in the aspect of reliability.However,LDD has a poor performance against ESD stress.A research has been made on the latent damages under the influences of snapback.And special attention is given to the correlation with hot carrier in LDD gg nMOS during ESD events.

关 键 词：LDD—CMOS ESD潜在损伤 SNAPBACK 

分 类 号：TN432[电子电信—微电子学与固体电子学]