微量Sn在高磁感取向硅钢中的晶界偏聚  

GRAIN BOUNDARY SEGREGATION OF TRACE Sn IN HIGH INDUCTION ORIENTED SILICON STEEL

作　　者：赵宇[1] 何忠治[2] 翁宇庆[2] 吴宝榕[2] 

机构地区：[1]冶金工业部钢铁研究总院二室,博士研究生北京100081 [2]冶金部钢铁研究总院

出　　处：《金属学报》1992年第8期A327-A332,共6页Acta Metallurgica Sinica

摘　　要：采用扫描Auger微探针(SAM)对微量Sn在高磁感取向硅钢中的晶界偏聚行为进行了研究,证明Sn在发生晶界偏聚时与取向硅钢中其它元素间没有明显的交互作用.在二次再结晶起始温度950℃,Sn在晶界仍有一定的偏聚量,作者认为,Sn通过在晶界偏聚起到了辅助抑制剂的作用.此外,根据理论分析,在高磁感取向硅钢中加入微量Sn可降低二次再结晶温度,这一结论与实验结果相吻合。When Sn segregated at grain boundaries of high induction oriented silicon steel, no remarkable interaction between Sn and other elements was observed. At the starting temperature of secondary recrystallization, 950℃, a certain Sn still segregates at grain boundaries. Sn seems to act as a supplemental inhibitor through grain boundary segregation. According to theoretical analysis, an addition of Sn may decrease the secondary recrystallization temperature of high induction oriented silicon steel, and it is in agreement with the experimental result.

关 键 词：取向佳钢 晶界偏聚 二次再结晶 锡 

分 类 号：TG142.7[一般工业技术—材料科学与工程]