多孔硅与聚乙烯咔唑复合光电性能研究  

Optical and Electrical Properties of the Composite of Porous Silicon and Poly(N-vinylcarbazole)

作　　者：赵毅[1] 杨德仁[1] 周成瑶[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2003年第4期507-509,共3页Journal of Materials Science and Engineering

摘　　要：用旋涂法实现了多孔硅与聚乙烯咔唑 (PVK)的复合 ,研究了多孔硅 PVK复合体系的光学性能和电学性能。PL谱的测试发现 ,复合体系的PL同时具有多孔硅和PVK的峰。此外 ,在 4 85nm的位置出现了一个新峰 ,讨论了这个峰的来源。Ⅰ Ⅴ特性测试表明 ,多孔硅 PVK异质结与多孔硅相比 ,Ⅰ Ⅴ曲线呈现更好的整流特性 。The spin coating method was used to assemble porous silicon(PS) with polymer(poly(N\|vinylcarbazole)(PVK)).The optical and electrical properties of the composite of porous silicon and PVK were studied.The PL spectrum of the composite not only showed the peak that belongs to porous silicon but also showed the peak that belongs to PVK.At the same time,a new peak was found locating at λ =485nm.THe origin of this peak was discussed.The Ⅰ Ⅴ characterization of the composite was measured.The results indicated that the Ⅰ Ⅴ properties of porous silicon was improved after coated with a PVK thin film.The reasons for improvement of Ⅰ Ⅴproperties were discussed.

关 键 词：多孔硅 聚乙烯咔唑 PVK 光电性能 PL谱 光电子领城 整流特性 旋涂法 发光二极管 

分 类 号：TN315.2[电子电信—物理电子学]