垂直腔面发射激光器新型结构的特性比较  

Characteristics comparison of a novel vertical-cavity surface-emitting laser

作　　者：朱文军[1] 郭霞[1] 廉鹏[1] 邹德恕[1] 高国[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《激光技术》2003年第4期325-327,共3页Laser Technology

基　　金：国家自然科学基金;国家重点基础研究与发展规划项目;北京市科委高科技资助项目

摘　　要：通过对一种微分量子效率可以大于 1的新型多有源区隧道再生应变量子阱垂直腔面发射半导体激光器 (VCSELs)结构 ,以及由此设计出的阈值电流更小、输出功率更大的器件与普通结构在反射率及注入电流都相同的条件下输出功率大小的比较及阈值电流密度大小的比较 ,从而在理论上证实了这种VCSELs新型结构的优势。A novel multiple-active-region tunneling regenerated strained-quantum-well vertical-cavity surface-emitting laser(VCSEL),whose differential quantum efficiency is larger than unity and whose performance is expected to be improved,especially the threshold current is expected to be reduced and the output power is expected to be increased,was designed.Then the output power,threshold current of the novel structure and those of the traditional structure were compared under the conditions of the same reflectivity and injected current.So the advantages of the novel structure have been proved in theory.

关 键 词：多有源区 隧道再生 VCSELS DBR反射率 

分 类 号：TN248.1[电子电信—物理电子学]