多层Ge量子点的生长及其光学特性  

Growth of Stacked Ge Quantum Dots and Its Optical Charac teristics

作　　者：邓宁[1] 王吉林[1] 黄文韬[1] 陈培毅[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2003年第9期951-954,共4页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :6 9836 0 2 0 );教育部985(批准号 :Jz2 0 0 10 10 )资助项目~~

摘　　要：用超高真空化学气相淀积系统在Si(1 0 0 )衬底上生长了多层Ge量子点 .分别用TEM和AFM分析了埋层和最上层量子点的形貌和尺寸 ,研究了量子点层数和Si隔离层厚度对上层Ge量子点的形状和尺寸分布的影响 .观察到样品的低温PL谱线有明显蓝移 (87meV) ,Ge量子点的PL谱线的半高宽度 (FWHM )为 46meV 。Stacked Ge quantum dots are grown on Si(100) by u ltra-high vacuum chemical vapor deposition(UHV/CVD).The morphology and size distribution of embedded and upper Ge dots are studied by TEM and AFM respectively.The influences of number of layers and thickness of Si spacer on upper Ge dots are investigated as well.An apparent blue shift (87meV) is observed from the PL sp ectrum at 10K.FWHM of Ge dots NP peak is 46meV,which indicates the narrow size d istribution of stacked Ge dots grown by UHV/CVD.

关 键 词：超高真空化学气相淀积 多层锗量子点 PL谱 

分 类 号：TN205[电子电信—物理电子学]