低电压低功耗CMOS射频低噪声放大器的研究进展  

An Overview of Low-Voltage and Low-Power CMOS RF Low-Noise Amplifiers

作　　者：曹克[1] 杨华中[1] 汪蕙[1] 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《微电子学》2003年第4期317-323,共7页Microelectronics

基　　金：国家自然科学基金重大研究计划(90207001)

摘　　要：　由于无线移动终端重量、体积以及成本等各方面的限制,电路必须满足低电压、低功耗的要求。在CMOS射频低噪声放大器中,如何在满足性能指标要求的同时降低电源电压和功耗,已成为当前研究的热点。文章综述了几种降低CMOS低噪声放大器电源电压和功耗的方法,讨论了一些相关的设计问题。最后,展望了低电压、低功耗CMOS低噪声放大器的未来发展趋势。IC's used in portable wireless terminal systems must be lowvoltage compatible and lowpower consuming,due to considerations in weight,volume and cost of the terminal Intensive studies have been made on the reduction of supply voltage and power consumption without trading off the performance of the CMOS lownoise amplifiers Techniques for designing lowvoltage,lowpower CMOS lownoise amplifiers are reviewed in the paper Some issues related to the design are also discussed Finally,the future trend of the development of lowvoltage,lowpower CMOS lownoise amplifiers is predicted

关 键 词：低电压 低功耗 CMOS 射频电路 低噪声放大器 无线通信 

分 类 号：TN722.3[电子电信—电路与系统]