烧结法与熔渗法铜铬触头微观组织差异及对电性能的影响  

MICROSTRUCTURES AND INTERRUPTING BEHAVIORS OF CuCr CONTACTS MADE BY P/M MANUFACTURE PROCESSES

作　　者：傅肃嘉 

机构地区：[1]浙江省冶金研究院,浙江杭州310013

出　　处：《高压电器》2003年第4期52-55,共4页High Voltage Apparatus

摘　　要：评述了熔渗法和混粉烧结法两种工艺制备的CuC触头的微观结构差异及对其电开断性能的影响。与熔渗法相比,烧结法制备的CuCr触头具有更好的抗熔焊性能、更低的截流值和更好的吸放气性能,但因其机械强度较低,耐压性能可能不如熔渗法触头。对两种工艺提出了改进的建议。Microstructure characteristics and their effects on interrupting behaviors are discussed for CuCr vacuum contact materials made by P/M sintering and infiltration processes.Compared with that of infiltration process,the contact made by sintering process shows better anti-welding ability,lower chopping current and more excellent gas absorption ability,but its dielectric strength is not as good as that of infiltration CuCr contact due to its relatively low mechanical strength.Suggestions for further improvement of these contacts are also presented.

关 键 词：铜铬触头 微观组织 烧结法 熔渗法 电性能 微观结构 真空灭弧室 真空断路器 

分 类 号：TM503.5[电气工程—电器]