掺杂Ag元素对溶胶–凝胶一步法制备BaTiO_3基PTCR陶瓷性能的影响  

Effect of Ag-doping on BaTiO_3-based PTCR Ceramics by Once-through Method in Sol-gel Process

作　　者：赵丽丽[1] 畅柱国[2] 吴淑荣[2] 熊为淼[2] 

机构地区：[1]西北大学电子科学系,陕西西安710069 [2]西北大学化学系,陕西西安710069

出　　处：《电子元件与材料》2003年第9期24-26,共3页Electronic Components And Materials

摘　　要：为改善PTCR陶瓷材料的电学性能,采用AgNO3作为Ag掺杂原料,用溶胶–凝胶一步法合成了含Ag元素的BaTiO3基PTCR陶瓷,着重讨论了银含量对半导体陶瓷电学性能的影响规律。结果表明,适量的Ag掺杂对材料的室温电阻率(r)影响不大,并且还可以有效提高PTCR陶瓷的温度系数(aR)和耐电压(Vb)。本实验中掺杂0.05%Ag(摩尔分数)时,获得的PTCR陶瓷性能较好:r≈28 W·cm,a25>16%℃1,Vb>180 V·mm1。Silver was doped with AgNO3 as starting material, and BaTiO3-based ceramics prepared by a once-through method in sol-gel process. Effect of Ag content on the electrical properties of PTCR ceramics was discussed. The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped. In this experiment, mol 0.05% of Ag was doped, and of the PTCR ceramics r2528 W·cm, a25>16%C-1, and Vb>180 V·mm-1.

关 键 词：PTCR 溶胶-凝胶法 阻温系数 掺杂 

分 类 号：TM223[一般工业技术—材料科学与工程]