LiNbO_3晶体中引入π位相差实现选择性擦除  

Selective Erasure of Photorefractive Holograms in Fe∶LiNbO_3 by Introducing π Phase Shift on the Reference Wave

作　　者：周元林[1] 谢敬辉[1] 孙萍[1] 张颖[1] 徐玉恒[2] 徐悟生[2] 

机构地区：[1]北京理工大学光电工程系,北京100081 [2]哈尔滨工业大学应用化学系,黑龙江哈尔滨150001

出　　处：《中国激光》2003年第8期726-730,共5页Chinese Journal of Lasers

摘　　要：在晶体中进行大容量多重体存储 ,需要对晶体中记录数据进行修改 ,这就使得选择性擦除必不可少。介绍了铌酸锂晶体中实现选择性擦除的原理 ,着重介绍了在物光和参考光中引入π位相差的几种方法 ,通过引入π位相差来记录互补全息图 ,利用全息图及其他的互补全息图的非相干叠加来消除原全息图对晶体折射率的调制 ,从而实现对未定影全息图的选择性擦除。实现了在晶体中某一数据页面内部分数据的擦除 ,并从理论上对实验结果进行了分析。With the development of multiplexing holographic storage in Fe∶LiNbO 3, it′s absolutely necessary to modify or reedit the data stored in the crystal, so selective erasure is indispensable. In this paper, the principle of selective erasure and some methods for introducing π phase shift is reported, by recording the complementary hologram which leads to the complementary refractive index changes, the process of selective erasure can be realized. At the same time, some experiment results are also demonstrated and the analysis of these results are given.

关 键 词：信息光学 体全息存储 选择性擦除 LINBO3晶体 

分 类 号：O438.1[机械工程—光学工程]