级联型低噪声放大器设计和优化的研究  

Research on Design and Optimization of a Cascode LNA

作　　者：方磊[1] 陈邦媛[1] 

机构地区：[1]浙江大学信息科学与电子工程系,浙江杭州310027

出　　处：《电路与系统学报》2003年第4期58-62,共5页Journal of Circuits and Systems

摘　　要：文章详细分析了共源共栅级联型低噪声放大器的优化设计方法。文章首先简要的介绍共源共栅MOSFET低噪声放大器优化设计步骤。在此基础上,通过分析整个级联型低噪声放大器的密勒效应对优化设计的影响,进一步提出了对共栅级MOSFET的沟道宽度优化的必要性。最后,文章以一个工作于2.4GHz,0.5mm工艺的低噪声放大器设计为例,证实了前面理论分析的正确性,并根据低噪声放大器的主要设计指标给出了共源共栅结构下共栅级MOSFET的沟道宽度的优化方法。An optimal design method of Cascode LNA is presented in detail. At the beginning of the paper the optimal design procedure of Cascode LNA is introduced. Based on this, the article draws a conclusion that the optimizing channel width of common-source MOSFET is necessary by analyzing Miller effect of LNA. At last, a 2.4 GHz 0.5μm LNA design is presented. And the method that can get optimum channel width of common-gate MOSFET based on the design target is shown in this design example.

关 键 词：低噪声放大器 密勒效应 共源 共栅 共源共栅级联 

分 类 号：TN722[电子电信—电路与系统]