Si(337)表面的STM研究  

STM Study of Si(337) Surface

作　　者：万维强[1] 申自勇[1] 柏亚军[1] 侯士敏[1] 赵兴钰[1] 刘惟敏[1] 薛增泉[1] 

机构地区：[1]北京大学电子学系,北京100871

出　　处：《真空科学与技术》2003年第4期231-234,共4页Vacuum Science and Technology

基　　金：国家自然科学基金 (No .50 2 0 2 0 0 1;6 990 2 0 0 2 6 0 2 310 10 6 99710 0 3);国家重点基础研究资助项目 (No .2 0 0 1CB6 10 50 3)

摘　　要：利用超高真空扫描隧道显微镜 (UHVSTM) ,研究了Si(337)高指数面的形貌和原子结构 ,发现Si(337)表面平台的生长与退火速度有关 ,相对较慢的退火速度有利于生长尺寸更大、结构更完整的平台。高分辨STM结果显示Si(337)表面平台原子结构为 (5 5 1 2 )的周期性结构 ,表明Si(337)表面退火过程中稳定性较差 。The topography and atomic structures of the Si(337) surface was investigated with an ultra high vacuum scanning tunneling microscopy (UHV STM). It was found that the width of terraces on the Si(337) surface depended on the annealing rate. Structural perfect terraces with much larger size could be obtained with a relatively slower annealing rate. High resolution STM images showed that (5512) periodic structures were formed on the terraces of the Si(337) surface, which indicated that the Si(337) surface was not stable and tended to reconstruct to more stable vicinal facets.

关 键 词：Si(337) 高指数面 扫描隧道显微镜 

分 类 号：O484.1[理学—固体物理]