沉积在硅油表面上Au薄膜的电学性能及成膜机理  

Growth mechanism and electrical properties of Au films deposited on silicone oil surfaces

作　　者：夏阿根[1] 杨波[1] 金进生[1] 叶全林[1] 陶向明[1] 叶高翔[1] 

机构地区：[1]浙江大学物理系

出　　处：《真空科学与技术》2003年第4期235-239,共5页Vacuum Science and Technology

基　　金：国家自然科学基金资助项目 ( 10 174 0 6 3)

摘　　要：采用硅油作基底 ,沉积出具有网状特征结构的逾渗Au薄膜 ,用四引线方法原位测量Au薄膜的电学性能 ,测得其电阻随沉积时间以及凝聚时间的变化规律 ,较好地解释了此类薄膜的生长机制。对Au薄膜R I特性的测量结果表明 :生长在液体基底表面Au薄膜的局域隧道电流和跳跃电导效应比一般薄膜更为强烈 ,其功率谱指数w趋于零 。Gold films, grown on the top of silicone oil by thermal deposition, is studied. A web-shaped characteristic structure is observed. The time dependence of its sheet resistance, measured in-situ with the four-probe technique, is explained with the mechanism of film growth on oil surface. The results show that the localized tunneling and conductance hopping of the Au film are much pronounced than those of the percolation film with similar structures grown by other techniques. Its power spectrum w, is close to zero critical exponent, and much lower than that of other percolation films.

关 键 词：Au薄膜 网状结构 电特性 

分 类 号：O484.1[理学—固体物理]