脉冲激光烧蚀沉积纳米Si膜动力学研究现状  

Progress of Dynamic Study for Silicon Nanoparticales Deposited by Pulsed Laser Ablation

作　　者：张荣梅[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2003年第3期329-333,共5页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目 (5 0 0 0 84 )

摘　　要：Si基纳米材料在半导体光电集成领域有着十分诱人的前景 ,脉冲激光烧蚀技术是目前材料界和分析界最有前景的技术之一 .介绍了脉冲激光烧蚀沉积Si基纳米材料的基本原理 。Nanostructrured Si_based materials have wide prospect in the semiconductor opto_electronic integration field.Pulse laser ablation is one of the most important developed technique in recent years with its applications in material and analytical fields. The fundamental theory of Silicon nanoparticales deposited by pulse laser ablation was introduced and its dynamic study in recent years was systematically reviewed from theory and experiment.

关 键 词：脉冲激光烧蚀 沉积 动力学 纳米Si膜 

分 类 号：O53[理学—等离子体物理] O354[理学—物理]