一种国产GaAs/Ge太阳电池的总剂量辐照特性  

Total dose radiation effects of a home-made type of GaAs/Ge solar cell

作　　者：艾尔肯[1] 郭旗[1] 任迪远[1] 余学峰[1] 陆妩[1] 严荣良[1] 

机构地区：[1]中国科学院新疆物理所,乌鲁木齐830011

出　　处：《核技术》2003年第9期697-699,共3页Nuclear Techniques

摘　　要：对一种国产金属有机物化学气相沉积(MOCVD)工艺制备的GaAs/Ge太阳电池进行了1MeV电子辐照损伤研究,讨论和分析了电池电参数和光谱响应的衰降规律和原因并与常规硅太阳电池作了比较。实验结果表明,GaAs/Ge电池与常规Si电池相比,不但转换效率高而且其抗辐射能力也比Si电池好。另外,带有Al_xGa_(1-x)As窗口层的GaAs电池的辐射损伤机理与Si电池不同。Radiation effects of a home-made type of GaAs/Ge solar cell have been discussed. The results indicate that the GaAs/Ge solar cell has higher efficiency and more radiation resistance than regular Si solar cell. In addition, the mechanism of radiation damage of the GaAs solar cell with AlxGa1-xAs window layer is different from that of Si solar cell.

关 键 词：太阳电池 电子辐照 辐射损伤 光谱响应 

分 类 号：TN304[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]