PIN-PT晶体铁电性和压电性的温度稳定性研究  

Temperature Dependence of Dielectric and Piezoelectric Properties of Pb(In_1/2Nb_1/2)O_3-PbTiO3 Single Crystal

作　　者：郭益平[1] 罗豪甦[1] 潘晓明[1] 徐海清[1] 殷之文[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海201800

出　　处：《无机材料学报》2003年第5期1005-1009,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(59995520);国家自然科学基金(59872048)

摘　　要：测试了采用熔体法通过使用异质同构的Pb(Mg1/3Nb2/3)O3-PbTiO3籽晶生长出的Pb(In1/2Nb1/2)O3-PbTiO3单晶的铁电、压电性能的温度稳定性,研究结果发现,<001>取向的PIN—PT单晶不但具有非常优越的铁电、压电性能,其室温电容率ε达5000左右,介电损耗因子tgδ-1％,k33值最大可达到95％,d33值最大可达到3000pC/N左右.而且具有很高的温度稳定性,即使测试温度超过150℃,k33值也只下降不到10％.研究结果表明,该晶体是继PMN-PT和PZN—PT单晶之后又一种非常具有发展前途的单晶.Temperature dependence of dielectric, piezoelectric properties and polarization vs E-field curves of Pb(In1/2Nb1/2)O-3-PbTiO3 single crystal grown directly from melt by the modified Bridgman technique with an allomeric Pb(Mg1/3Nb2/3)O-3-PbTiO3 seed crystal was investigated. For <001> poled crystals, the permittivity E, and the dielectric loss tangent tgdelta are 5000 and 1% respectively. For T < 100degreesC, the value of k(33) is relatively temperature independent, with a value between 0.9 to 0.95, even at 150degreesC, the value of k(33) decreases by only 10%. The value of d(33) reaches up to a maximum of 3000 pC/N at about 80degreesC, and has a value of 850 pC/N at 150degreesC. The results obtained show that (1-x)Pb(In1/2Nb1/2)O-3-xPbTiO(3) single crystals are promising for a wide range of electromechanical transducer applications.

关 键 词：PIN-PT单晶 压电 介电 温度稳定性 

分 类 号：TM22[一般工业技术—材料科学与工程]