多孔硅与有机发光材料复合的光电特性  

Optical and Electrical Properties of the Composites of Porous Silicon and Organic Luminescent Materials

作　　者：赵毅[1] 夏明哲[1] 杨德仁[1] 周成瑶[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《光电子．激光》2003年第9期950-953,共4页Journal of Optoelectronics·Laser

摘　　要：用旋涂法实现了多孔硅(PS)与有机发光材料聚乙烯咔唑(PVK)和八羟基喹啉(Alq3)的复合,研究了PS/(PVK,Alq3)复合体系的光学性能和电学性能。PL谱的测试发现,PS/PVK复合体系的PL同时具有PS和PVK的峰;在485nm的位置出现了1个新峰,讨论了这个峰的来源。研究了n型单晶Si制备的PS与PVK复合(n PS/p PVK)和p型单晶Si制备的Alq3复合(p PS/n Alq3)后的I V特性。测试表明,这两个复合体系的I V曲线都显示了良好的整流特性。结果表明,PS/(PVK,Alq3)复合体系适合用来制备PS基的发光二极管。最后借助无机半导体的能带理论对此进行了分析。The spin coating method was used to assemble porous silicon (PS) with polymer (poly N-vinylcar-bazole, PVK) and 8-hydroxyquinoline aluminum(Alq3). The optical and electrical properties of the composites of porous silicon and (PVK, Alq3) were studied. The PL spectrum of the composite of porous silicon and PVK not only shows the peak that belongs to porous silicon but also shows the peak that belongs to PVK. At the same time, a new peak was found locating at λ= 485 nm. The origin of this peak was discussed. The I-V characterizations of the composites of n-PS/PVK and p-PS/Alq3 were measured. The I-V cures of composites show excellent rectify properties. The reasons for improvement of I-V properties were discussed in aid of energy band theory.

关 键 词：多孔硅 有机发光材料 聚乙烯咔唑 八羟基喹啉 I-V曲线 光学性能 电学性能 

分 类 号：TB32[一般工业技术—材料科学与工程]