磁控溅射PtSi/p-Si纳米薄膜组织结构的研究  

Struture of PtSi/p-Si Nanometer Films Prepared by Sputtering

作　　者：殷景华[1] 蔡伟[2] 李美成[2] 赵连城[2] 

机构地区：[1]哈尔滨理工大学,黑龙江哈尔滨150080 [2]哈尔滨工业大学,黑龙江哈尔滨150001

出　　处：《稀有金属材料与工程》2003年第9期707-710,共4页Rare Metal Materials and Engineering

摘　　要：采用磁控溅射方法在p-Si(111)衬底上淀积5nmPt膜,分别在350℃～600℃退火。原子力显微镜(AFM)观察和X射线光电子谱(XPS)分析表明,随退火温度的增加,平坦的薄膜表面变得粗糙,其相分布由Pt-Pt2Si-PtSi变为Pt+Pt2Si+PtSi-PtSi。The 5 nm Pt films were deposited on p-Si(111) by magnetron sputtering and annealed at 350degreesC similar to 600degreesC. Their structures were characterized by AFM and XPS. The results show that with the increase of annealing temperature, the flat surface of the films becomes coarse and columnar, and the distribution order of phases in the films is changed from Pt-Pt2Si-PtSi to Pt + Pt2Si + PtSi-PtSi.

关 键 词：PTSI 薄膜 表面形貌 组织结构 

分 类 号：TB43[一般工业技术]