钇对掺铒多孔硅体系1.54μm发光的增强作用  

Enhanced 1.54 μm Luminescence from Erbium and Yttrium Co-doped Porous Silicon

作　　者：张晓霞[1] 谢国伟[2] 石建新[1] 罗莉[2] 黄伟国[3] 龚孟濂[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室 [2]香港浸会大学物理系 [3]香港浸会大学化学系

出　　处：《化学学报》2003年第9期1430-1433,共4页Acta Chimica Sinica

基　　金：香港RGCEarmarkedGrant资助项目;广东省自然科学基金 (Nos.980 342 ;970 1 63);光电材料与技术国家重点实验室基金 (2 0 0 0 )资助项目

摘　　要：首次报道了用恒电位电解法将铒、钇共掺入多孔硅 (poroussilicon ,PS)中 ,经高温退火处理后 ,观察到了在近红外区(1 5 4μm)室温下较强的光致发光 (photoluminescence ,PL) ,并与掺铒多孔硅 (erbium dopedporoussilicon ,PS∶Er)做了比较 ,发现钇的共掺入对掺铒多孔硅体系 1 5 4μm发射起了增强作用 .研究了铒、钇共掺杂多孔硅 (erbiumandyttriumco dopedporoussilicon ,PS∶Er ,Y)光致发光强度随温度的变化 ,发现PS∶Er与Si∶Er材料相似 ,有较强的温度猝灭效应 ,而PS∶Er ,Y体系的PL强度随温度升高趋于平稳 ,且有增强的趋势 ,受温度影响不明显 ,并初步探讨了其发光机制 .Fabrication of erbium (Er) and yttrium (Y) co-doped porous silicon (PS∶Er,Y) is firstly reported. Enhancement of Er-related photoluminescence at 1.54 μm has been achieved by the co-doping of Y 3+ . The dependence of photoluminescence intensity on temperature was investigated. Luminescence quenching was observed for PS∶Er, similar to that for Si∶Er, while 1.54 μm luminescence intensity from PS∶Er,Y was found to increase a little when the photoluminescence spectra were measured at a higher temperature. A possible enhanced photoluminescence mechanism was proposed.

关 键 词：钇 掺杂 铒 多孔硅 增强作用 近红外光致发光 发光机理 电化学 

分 类 号：O482.31[理学—固体物理]