硫酸/盐酸比例和Al^(3+)含量对铝箔隧道孔生长的影响  

The Influence of H_2SO_4/HCl Ratio and Al^(3+) Content on the Tunnel Growth of High Purity Aluminum Foil

作　　者：王刚[1] 闫康平[1] 严季新[2] 

机构地区：[1]四川大学化工机械系,四川成都610065 [2]江苏中联科技集团,江苏通州226361

出　　处：《电子元件与材料》2003年第10期10-12,共3页Electronic Components And Materials

摘　　要：研究了硫酸/盐酸比例、温度和Al3+含量对高纯铝箔隧道孔生长的影响,发现随着硫酸浓度增加,温度对隧道孔极限长度和孔径的影响减小,在本文条件下隧道孔生长的临界温度最低可降低到35℃。在电解液中一定含量的Al3+可以避免铝箔表面形成大孔,从而改善隧道孔分布均匀性。The influence of H2SO4/HCl ratio, temperature and Al3+ content on the tunnel growth of high purity aluminum foils for electrolytic capacitors was investigated. It is found the influence of temperature on the limit length and diameter of the tunnels becomes weak when H2SO4 concentration increases. In this study, the critical temperature is as low as 35℃. When Al3+ content well controlled, the tunnels are evenly distributed and cavities avoided.

关 键 词：隧道孔 浸蚀 高纯铝箔 铝电解电容器 

分 类 号：TM535.2[电气工程—电器]