Dark output characteristic of γ-ray irradiated CMOS digital image sensors  

作　　者：MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084, China 

出　　处：《Rare Metals》2002年第1期79-84,共6页稀有金属（英文版）

基　　金：the National Natural Science Foundation of China (No.10075029).

摘　　要：The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.

关 键 词：CMOS digital image sensor gamma radiation dark output characteristic SI 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]