Preparation of 5N high purified indium by the method of chemical purification-electrolysis  

作　　者：ZENG Dongming, ZHOU Zhihua, SHU Wangen, LIU Younian, and HU AipingCollege of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China 

出　　处：《Rare Metals》2002年第2期137-141,共5页稀有金属（英文版）

基　　金：This project is financially supported by Chinese Key Project of Science and Technology (No.96-119-04-01)

摘　　要：The application of indium requires high purity indium as material.5N high purity indium had been prepared by the method of acombination of chemically smelting and electrolysis. Smelting timewas 10 min, the abstraction rate of cadmium was 80/100-90/100 whenused solution of I_2-KI and glycerine to smelt indium. 4N metalindium was used as anode, high purity indium as cathode, In-2(SO_4)_3-H_2SO_4 system as electrolyte, and In content is 100 g/L, pH2-3 and current density 80-100 a/m^2.The application of indium requires high purity indium as material.5N high purity indium had been prepared by the method of acombination of chemically smelting and electrolysis. Smelting timewas 10 min, the abstraction rate of cadmium was 80/100-90/100 whenused solution of I_2-KI and glycerine to smelt indium. 4N metalindium was used as anode, high purity indium as cathode, In-2(SO_4)_3-H_2SO_4 system as electrolyte, and In content is 100 g/L, pH2-3 and current density 80-100 a/m^2.

关 键 词：high-purify INDIUM PREPARATION chemical purifying 

分 类 号：TF845[冶金工程—有色金属冶金]