弛豫铁电单晶PZNT91/9的生长与畴结构研究  

Growth and Domain Configurations of Relaxor Ferroelectric Single Crystal PZNT91/9

作　　者：徐家跃[1] 范世骥[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《压电与声光》2003年第4期315-317,共3页Piezoelectrics & Acoustooptics

基　　金：中国科学院重大项目资助(98JC14017);上海市自然科学重点基金资助(02DJ14041)

摘　　要：采用熔剂-坩埚下降法生长了91%Pb(Zn1/3Nb2/3)O3-9%PbTiO3(PZNT91/9)(摩尔分数)弛豫铁电单晶,PbO助熔剂摩尔分数控制在50%左右。所得晶体被PbO助熔剂包裹,将其浸泡在热HNO3中1～2天即可除去PbO。晶体呈浅黄色,具有明显的结晶学生长面。晶体沿(001)面切出数片,晶片质量明显好于通气Bridgman法生长的PZNT单晶。偏光显微镜可观察到71°、90°、180°畴或微畴区。晶片极化条件为:垂直于C面施加1kV/mm的电场并保持10～15min。Relaxor ferroelectric single crystal 91%Pb(Zn1/3Nb2/3)O39%PbTiO3 (PZNT91/9) was grown by fluxBridgman method using 50 mol% PbO as flux. Asgrown PZNT single crystal was covered with PbO flux and was separated from the flux by leaching in hot HNO3 for 1～2 days. The crystal had a pale yellow color and exhibited obvious growth facets. Several <001>cut plates were obtained and their quality was better than that of PZNT plates grown by gascooling Bridgman method. 71°, 90° and 180° domains and some microdomains were observed by polarized light microscope. The crystal plates could be poled by 1 kV/mm for 10～15 min.

关 键 词：PZNT 弛豫铁电单晶 坩埚下降法 晶体生长 PbO助溶剂 

分 类 号：O782.4[理学—晶体学]