纳米Fe-In_2O_3颗粒膜的磁电阻效应和光学特性  被引量:3

Magnetoresistance Effect and Optical Properties of Nanometer Fe-In_2O_3 Granular Films

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作  者:张林[1] 黄宝歆[1] 张汝贞[1] 刘宜华[1] 张连生[1] 梅良模[1] 

机构地区:[1]山东大学物理与微电子学院,济南250100

出  处:《压电与声光》2003年第4期341-343,共3页Piezoelectrics & Acoustooptics

基  金:国家自然科学基金资助项目(59981004)

摘  要:研究了射频溅射法制备的纳米Fe-In2O3颗粒膜的磁电阻效应和光学特性。磁电阻测量结果表明:当Fe体积分数为35%时,颗粒膜样品的室温磁电阻变化率Δρ/ρ0达4.5%。通过研究Fe-In2O3颗粒膜样品的透射光谱发现:在In2O3薄膜基体中嵌入纳米铁颗粒的Fe-In2O3颗粒膜中,电子的带间跃迁由In2O3的直接跃迁变为间接跃迁,其带隙随着Fe在颗粒膜中所占体积分数的增加而变窄。The magnetoresistance effect and optical properties of nanometer FeIn2O3 granular films prepared by the radio frequency sputtering have been studied. The messuring results of magnetoresistance show that the magnetoresistance ratio Δρ/ρ0 value of the granular films sample with Fe volume percent of 35% reaches 4.5% at room temperature. By studying the transmittance spectra of the granular films sample, it has been found that In2O3 is a kind of semiconductor material with direct transition band gap, but the transition between bands for FeIn2O3 granular films is indirect. The band gaps of FeIn2O3 granular films decrease with the increase of Fe volume fraction in the granular films.

关 键 词:纳米金属颗粒膜 磁电阻效应 光学特性 

分 类 号:O484.4[理学—固体物理]

 

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