Investigation of GaAs Photoconductive Switch Irradiated by 1553nm Laser Pulse  

用1553nm激光脉冲触发GaAs光电导开关的研究(英文)

作　　者：施卫[1] 贾婉丽[1] 

机构地区：[1]西安理工大学应用物理系,西安710048

出　　处：《Journal of Semiconductors》2003年第10期1016-1020,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 0 0 770 17)~~

摘　　要：Gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) with a 1.55mm gap spacing trigged by 1553nm femtosecond fiber laser pulse is presented.The switches are biased with 3.33～10.3kV/cm and irradiated by femtosecond fiber laser operated at a wavelength of 1553nm with pulse width of 200fs and pulse energy of 0.2nJ.The experiments show that,even if the semi-insulating GaAs photoconductive switch operates under the electrical field of 10.3kV/cm,it will be still linear response,and a clear corresponding output electric pulse with the peak voltage of 0.8mV is captured.From the weak photoconductivity on laser intensity,photoabsorption mediated by EL2 deep level defects is suggested,as the primary process for the photoconductivity.用 15 5 3nm飞秒光纤激光器触发半绝缘GaAs光电导开关的实验表明 ,当光电导开关处于 3 33～ 10 3kV/cm的直流偏置电场并被脉冲宽度 2 0 0fs且单脉冲能量 0 2nJ的激光脉冲照射时 ,开关表现为线性工作模式 ,开关输出峰值电压为 0 8mV .分析表明 ,开关对波长为 15 5 3nm触发激光脉冲表现出的弱光电导现象起因于半绝缘GaAs材料EL2深能级的作用 .

关 键 词：semi-insulating GaAs photoconductive switch EL2 deep level 

分 类 号：TN248[电子电信—物理电子学]