周期顺序蒸发工艺生长的Cu(In,Ga)Se_2薄膜结构  

Structure Study of Periodic Sequentially-Evaporated Thin Films of Cu(In,Ga)Se_2

作　　者：徐传明[1,2] 许小亮 闵海军[4] 徐军[4] 杨晓杰[4] 黄文浩[1] 刘洪图[3,2] 

机构地区：[1]中国科学技术大学精密机械与精密仪器系 [2]中国科学技术大学物理系,合肥230026 [3]中国科学技术大学结构分析重点实验室 [4]中国科学技术大学物理系

出　　处：《Journal of Semiconductors》2003年第10期1057-1062,共6页半导体学报（英文版）

基　　金：安徽省自然科学基金资助项目 (No .0 0 46 5 0 6 )~~

摘　　要：采用新颖的周期顺序蒸发和真空硒化退火工艺生长出p型CuIn0 7Ga0 3 Se2 薄膜 .通过XPS谱、Raman谱、XRD谱分析了预生长层以及硒化后的CuIn0 7Ga0 3 Se2 薄膜 ,对四元化合物Cu(In ,Ga)Se2 的Raman谱进行了讨论 ,并观察到Ga对A1模式峰位的移动影响 ,同时发现薄膜倾向于沿 (112 )晶面生长 ,薄膜贫Cu会加剧 (2 2 0 ) / (2 0 4)表面自发分解成 { 112 }小晶面 .研究表明 ,薄膜具有良好的电学特性和结构特性 .The p-type thin films of CuIn 0.7Ga 0.3Se 2 are obtained via novel periodic sequentially-evaporated and vacuum-selenized annealing process.The properties of the precursors and the as-grown CuIn 0.7Ga 0.3Se 2 films are measured by XPS,Raman and XRD,respectively.The Raman scattering in the quadruple semiconductor Cu(In,Ga)Se 2 is discussed firstly.It is found that the peak shift of A 1 mode is observed in CIGS samples because of doping Ga.The as-grown films with single phase,polycrystalline and chalcopyrite structure with (112) preferred orientation are confirmed by XRD spectra.The Cu-poor in the films can lead to a serious spontaneous decomposition from (220)/(204) surfaces to {112} facets.The results suggest that the films have fine electronic and structural properties.

关 键 词：CIGS 有序缺陷化合物 择优生长 表面自发分解 

分 类 号：TN304.05[电子电信—物理电子学]