利用边发射光致发光谱研究垂直腔面发射激光器材料的特性  

Edge-Emission Photoluminescence Study of Vertical-Cavity Surface-Emitting Laser Structures

作　　者：钮金真[1] 李国华[2] 

机构地区：[1]中央民族大学物理与电子工程系,北京100081 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2003年第10期1067-1071,共5页半导体学报（英文版）

摘　　要：在室温下测量了GaInP/AlGaInP垂直腔面发射激光器 (VCSEL)的光致发光谱和反射谱 .通过反射谱测量可以很容易得到激光器的腔模波长 .但是用通常的背散射配置不能测得与有源区中量子阱有关的光致发光信号 .用边激发配置可以测到量子阱的光致发光谱 ,但这样测得的光谱已经受到激光器中的分布布拉格反射镜 (DBR)的调制 .采用腐蚀去上DBR层的方法可以在背散射配置下测得量子阱的光致发光谱 ,但仍无法避免下DBR层对发光谱的调制作用 .从而只有采用边激发 边发射模式才能测得VCSEL中量子阱的真实的光致发光谱 .Photoluminescence and reflectance of GaInP/AlGaInP vertical-cavity surface-emitting laser (VCSEL) structure are investigated at room temperature.The cavity-mode wavelength can be easily obtained using reflectance measurement.But it is hard to observe the photoluminescence related to the quantum wells in the active region at the normal back-scattering configuration.The emission spectra are measured by using edge-excitation configuration,but the observed spectra have been modulated by the distributed Bragg reflectors (DBR) in VCSEL.By etching away the front DBR,the photoluminescence spectra of the VCSEL are measured at back-scattering configuration.However,the measured spectra are still affected by the bottom DBR.The real spectra of the quantum wells in the VCSEL can only be observed in the edge-excitation and edge-emission mode.

关 键 词：半导体激光器 光致发光 边发射 

分 类 号：TN248[电子电信—物理电子学]