种子层(Ni_(0.81)Fe_(0.19))_(1-x)Cr_x成分及厚度对Ni_(0.81)Fe_(0.19)薄膜磁性和微结构的影响  

EFFECTS OF COMPOSITIONS AND THICKNESSES OF (Ni0.81Fe0.19)1-xCrx SEED LAYERS ON MAGNETISM AND MICROSTRUCTURE OF Ni0.81Fe0.19 FILMS

作　　者：李海峰[1] 马纪东[1] 张辉[1] 于广华[1] 朱逢吾[1] 

机构地区：[1]北京科技大学材料物理与化学系,北京100083

出　　处：《金属学报》2003年第10期1043-1046,共4页Acta Metallurgica Sinica

基　　金：国家自然科学基金资助项目19890310和50271007

摘　　要：用直流磁控溅射方法制备了性能优良的以(Ni0.81Fe0.19)1-xCrx为种子层的Ni0.81Fe0.19薄膜,研究了种子层成分 及厚度对薄膜磁性和微结构的影响,结果表明:当种子层(Ni0.81Fe0.19)0.63Cr0.37厚度为5.5 nm时,Ni0.81Fe0.19(20.0 nm) 薄膜的各向异性磁电阻(AMR)值为(2.53±0.06)％;当Cr的含量为0.36时, Ni0.81Fe0.19(60.0 nm)薄膜的AMR值为 (3.35±0.06)％.AFM及XRD研究表明:不同厚度缓冲层(厚度分别为2.8,5.5和8.3 nm)的Ni0.81Fe0.19(20.0 nm)薄 膜表面平均晶粒尺寸基本都为35.2 nm,但其111织构相差很大,AMR值最大时,对应的111衍射峰最强;不同Cr含量(分 别为0.28,0.36和0.41)的Ni0.81Fe0.19(60.0 nm)薄膜表面平均晶粒尺寸和111衍射峰相差都很明显,AMR值最大时, 对应地薄膜表面平均晶粒尺寸最大, Ni0.81 Fe0.19 111衍射峰也最强.High magnetoresistance Ni0.81Fe0.19 films grown on the seed layers of (Ni0.81Fe0. 19)1-x Crx have been fabricated with magnetron sputtering and the effect of compositions and thicknesses of the seed layers on magnetism and microstructure of Ni0.81Fe0.19 films was studied. It has been found that an anisotropic magnetoresistance (AMR) value, (2.53±0.06)%, of Ni0.81Fe0.19 (20.0 nm) film appears as the seed layer is at x≈0.37 with a thickness of about 5.5 nm, and the AMR value, (3.35±0.06)%, of Ni0.81Fe0.19 (60.0 nm) film corresponds to x ≈ 0.36 and a thickness of about 5.5 nm. The results of atomic force microscope and X-ray diffraction show that the average grain sizes of Ni0.81Fe0.19 (20.0 nm) films with seed layer thicknesses of 2.8, 5.5 and 8.3 nm are almost the same as 35.2 nm. However, their 111 textures are obviously different, the 111 peak is the strongest when AMR value is the maximum. Both average grain sizes and 111 textures of the Ni0.81Fe0.19 (60.0 nm) films with Cr concentrations of 0.28, 0.36 and 0.41 have much difference.when AMR value is maximum, the average grain size is the largest and the 111 peak is the strongest.

关 键 词：Ni0.81Fe0.19薄膜 (Ni0.81Fe0.19)1-xCrx种子层 各向异性磁电阻 晶粒尺寸 111织构 

分 类 号：TG113[金属学及工艺—物理冶金]