PLD系统中硅板加热器温度的影响因素  

Influence Factors on Temperature of Silicon Heater in PLD System

作　　者：彭巨擘[1] 张鹏翔[1] 陈大鹏[1] 虞澜[1] 朱绍将[1] 王茺[1] 

机构地区：[1]昆明理工大学光电子新材料研究所,云南昆明650093

出　　处：《材料科学与工程学报》2003年第5期731-732,共2页Journal of Materials Science and Engineering

摘　　要：研究了PLD系统中用硅板做衬底加热器时影响衬底温度的几个因素。通过使用校准了的红外测温仪做温度检测元件 ,发现 :1 硅板上各部分的温度不是均匀分布的 ;2 衬底放在硅板上时 ,衬底温度和硅板温度有很大的不同 ;3 在相同的硅板加热电流下 ,硅板温度随硅板环境的真空度不同而变化。不细致考虑上述因素时 ,脉冲激光沉积 (PLD)Using calibrated infrared temperature meter,we studied the influence factor on temperature of silicon heater in PLD system.The results show that:1.The temperature of silicon plate is inhomogeneous in different area;2.when the substrate is laid on silicon plate,there is a great temperature difference between the silicon plate and the substrate;3.the temperature of the silicon plate will change with the surrounding vacuum when the uniform heating current is provided.If these factors are not taken into account,it is hard to control the temperature for growing the high quality films by PLD.

关 键 词：PLD系统 硅板加热器 温度 影响因素 红外测温仪 真空度 脉冲激光沉积 

分 类 号：TG174.444[金属学及工艺—金属表面处理]