衬底温度对沉积的NiTi薄膜晶化行为的影响  

Effect of substrate temperature on crystallization behavior of NiTi thin films

作　　者：李永华 纪红[2] 孟繁玲[1] 邱利霞[1] 郑伟涛[1] 王煜明[1] 

机构地区：[1]吉林大学麦克德尔米德实验室材料系,吉林长春130023 [2]吉林大学物理学院,吉林长春130023

出　　处：《材料科学与工艺》2003年第3期251-253,共3页Materials Science and Technology

基　　金：吉林省科技厅基金资助项目(20020611);教育部高等学校博士点基金资助项目.

摘　　要：将采用直流磁控溅射方法制备的NiTi薄膜沉积在热的衬底上,应用X射线散射和小角X射线散射技术研究了NiTi合金薄膜中生成的晶化粒子的界面特征和晶粒大小.结果表明:衬底加热可降低薄膜的晶化温度,衬底温度在350℃以上,溅射的NiTi薄膜已部分晶化;衬底温度在350、370℃和420℃溅射的NiTi薄膜,对应的晶化粒子的半径分别是2 40、2 59、2 81nm;薄膜中的晶化粒子以形核长大的方式进行,结晶粒子与基底之间有清晰的界面.NiTi thin films were deposited on hot substrate by D.C. magnetron sputtering at substrate temperatures of 350?370 ℃ and 420 ℃, respectively, the interfacial characteristics and the size of the crystalline particles in NiTi thin films were studied using Xray diffraction (XRD) and Smallangle Xray Scattering (SAXS), and the results show that the crystallization temperature is reduced, the films deposited on substrates above 350 ℃ are partly crystallized; the sizes of crystalline particles obtained are 240 nm?259 nm and 281 nm, for substrate temperatures of 350 ℃?370 ℃ and 420 ℃ respectively;and the crystalline particles of NiTi film deposited on heated substrate have a sharp interface between crystallized and amorphous phases.

关 键 词：衬底 温度 沉积 NiTi合金薄膜 晶化粒子 小角X射线散射 

分 类 号：TG146[一般工业技术—材料科学与工程] O484.4[金属学及工艺—金属材料]