Ni_(81)Fe_(19)各向异性磁电阻薄膜的工艺和微结构的研究  

Studies of the process technology and microstructure of Ni_(81)Fe_(19) anisotropic magnetoresistance films

作　　者：赵洪辰[1] 于广华[2] 司红[3] 

机构地区：[1]中国科学院微电子中心,北京100029 [2]北京科技大学材料物理系,北京100083 [3]钢铁研究总院,北京100081

出　　处：《功能材料》2003年第5期513-514,517,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大资助项目(19890310)

摘　　要：　在不同本底真空和工作气压下制备了Ta/Ni81Fe19薄膜,并进行了磁性测量和原子力显微镜分析。结果表明较高的本底真空和较低的工作气压下制备的薄膜有较大的各向异性磁电阻值ΔR/R。其原因是高本底真空和低工作气压导致大晶粒尺寸和低粗糙度,进而降低电子的散射,减小电阻R,增大各向异性磁电阻ΔR/R。在不同真空度下制备了(Ni81Fe19)64Cr36/Ni81Fe19薄膜,与以Ta为衬底的薄膜相比,具有更大的各向异性磁电阻值,达到了3.2%,这是国内目前报道的最大值,但它受真空度的影响更大。Ta/Ni81Fe19 films were prepared at different base vacuums and sputtering pressures. The results of magnetic measurement and atomic force microscopy (AFM) show that the films prepared at higher base vacuum and lower sputtering pressure have larger anisotropic magnetoresistance. The reason is that higher base vacuum and lower sputtering pressure introduce larger grain-size and lower surface roughness, which will weaken the scattering of electrons, reduce the electric resistance, and increase the anisotropic magnetoresistance. The anisotropic magnetoresistance of (Ni81 Fe19)64 Cr36/NiFe is even larger than that of Ta/NiFe, and reaches 3.2% which is the highest value in China. It is influenced by base vacuum more severely.

关 键 词：各向异性磁电阻薄膜 微结构 Ta/Ni81Fe19薄膜 原子力显微镜 制备 

分 类 号：TM27[一般工业技术—材料科学与工程]