太赫兹光非对称解复用器中自发辐射噪声特性分析  

Analysis of the Characteristics of Amplified Spontaneous Emission in TOAD

作　　者：温亮生[1] 伍剑[1] 林金桐[1] 

机构地区：[1]北京邮电大学光通信中心,北京100876

出　　处：《中国激光》2003年第9期829-834,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金 (批准号 :6 0 0 72 0 35 )资助项目

摘　　要：提出了一个在超短脉冲注入半导体光放大器 (SOA)时 ,在考虑了半导体带间效应以及带内效应 ,包括载流子热效应、谱烧孔效应、双光子吸收效应以及超快非线性折射效应的自发辐射噪声的计算模型。并利用该模型计算了放大自发辐射 (ASE)噪声对太赫兹光非对称解复用器 (TOAD)开关性能的影响。数值结果表明 ,在考虑ASE噪声情况下 ,TOAD的开关窗口的边沿更陡 ,在开关窗口的尾部还会出现明显的小峰。结果还表明 ,在输入为理想孤子脉冲下 ,即使考虑ASE噪声 ,在TOAD处于开的状态时 ,其输出信号的信噪比也大于 2 5dB。A model for the treatment of amplified spontaneous emission (ASE) noise in semiconductor optical amplifiers (SOA) in the case of ultra-short pulse injected into SOA by taking not only interband effects but also intraband effects, such as carrier heating, spectral hole burning, two-photon absorption and ultrafast nonlinear refraction is proposed. The influence of ASE on the performance of terahertz optical asymmetric demultiplexers (TOAD) is also discussed. Numerical results show that the edge of switching window of a TOAD device becomes sharper and the over-shoot peak in the tailing edge of switching window becomes more obvious when the ASE noise is considered. Results also show that the signal noise ratio (SNR) of output signal of TOAD is larger than 25 dB when it is in the turn-on state.

关 键 词：通信技术 自发辐射噪声 太赫兹光非对称解复用器 半导体光放大器 开关窗口 信噪比 

分 类 号：TN929.11[电子电信—通信与信息系统]