新型钡钨阴极的发射性能研究  

Emission Characteristics of Newly Developed Barium Tungsten Cathode

作　　者：张红卫[1,2] 丁耀根[1] 白振纲[1] 

机构地区：[1]中国科学院电子学研究所 [2]中国科学院研究生院 北京 100080博士生

出　　处：《真空科学与技术》2003年第5期365-368,共4页Vacuum Science and Technology

摘　　要：本文研究了新型钡钨阴极发射性能,并且分别用扫描电子显微镜(SEM)和工业CT微焦点系统来分析所研制的新型钡钨阴极的表面形貌和内部微细结构。该阴极不仅简化了传统浸渍钡钨阴极生产工艺,而且发射性能优于传统工艺阴极。The microstructures and surface topography of a newly developed barium-tungsten cathode were studied with scanning electron microscopy ( SEM) and industrial computed tomography (ICT) to understand its emission characteristics. Its advantages over conventional technique include better emission performance and much simple fabrication procedures.

关 键 词：钡钨阴极 发射性能 真空电子器件 电子发射源 微波器件 

分 类 号：TN103[电子电信—物理电子学] TN12