掺杂Mg^(2+)对钛酸锶薄膜氧敏性能及电阻温度系数的影响  

EFFECT OF Mg^2+ ADDITION ON OXYGEN SENSITIVITY AND TEMPERATURE COEFFICIENT OF RESISTANCE OF SrTiO_3 THIN FILMS

作　　者：梁崇[1] 杨德安[1] 杨莉[1] 赵巍[1] 徐廷献[1] 

机构地区：[1]天津大学材料科学与工程学院,天津300072

出　　处：《硅酸盐学报》2003年第9期832-835,共4页Journal of The Chinese Ceramic Society

摘　　要：利用溶胶-凝胶的方法制备钛酸锶氧敏薄膜,该薄膜是制造电阻型氧敏传感器的一种潜在材料。在钛酸锶中掺杂不同含量的镁离子,形成SrTi_(1-x)Mg_xO_3薄膜,其中Mg的含量,即x值分别为0,0.05,0.10,0.15,0.20,0.25,0.30。镁在钛酸锶中取代钛位,形成受主掺杂。测试不同氧分压(0～10~5Pa)、温度(600～800℃)下薄膜的电阻。发现掺镁的钛酸锶在氧化气氛下是p型半导体。并且当x值(镁的含量)在0.10～0.15之间、较低氧分压下,薄膜的电阻温度系数接近零。此外,还从缺陷化学反应角度讨论了此现象出现的原因。SrTiO3 thin films used in resistive oxygen sensors were prepared by sol - gel processing. The element of Mg was doped in SrTiO3 to form SrTi1-xMgxO3 thin films. Mg is substituted for Ti in SrTiO3 , the amounts(x value) of which are 0, 0. 05, 0. 10, 0. 15, 0. 20, 0. 25 and 0. 30 respectively. Resistance of the samples were measured in the temperature range of 600-800℃ and Po2 region from 0-105 Pa. The results show that SrTiO3 thin films doped with Mg exhibit p-type semicon-ductor under oxidizing atinosphere. It is found that when the x value (Mg content) is 0. 10-0, 15, the electrical conduction of SrTi1-x MgxO3 thin film is independent of the temperature in low oxygen partial pressure. The reason of such phenomena is dis-cussed from the viewpoint of the defect chemistry equations.

关 键 词：钛酸锶薄膜 镁掺杂 氧敏材料 电导 

分 类 号：TN212[电子电信—物理电子学]