平面磁化/垂直磁化双层耦合膜的磁化方向分析  

Analysis on the Magnetization Orientation of In-plane/perpendicular Exchange-coupled Double-layer Magneto-optical Films

作　　者：王现英[1] 张约品[1] 李青会[1] 沈德芳[1] 干福熹[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《磁性材料及器件》2003年第5期22-24,共3页Journal of Magnetic Materials and Devices

摘　　要：平面磁化/垂直磁化双层磁光薄膜之间交换耦合作用的控制是中心孔探测型磁超分辨(CAD-MSR)技术的关键。本文根据磁能分布的连续模型,通过一定的数值方法和边界条件解磁能量方程。总结了单层膜磁交换常数、有效各向异性常数和饱和磁化强度对读出层磁化方向的影响规律。计算结果表明,要实现CAD-MSR,平面磁化层的饱和磁化强度必须有随温度升高而下降的趋势,而记录层的饱和磁化强度最好随温度升高而增大。计算结果将对两层耦合膜实验中材料的选取有直接的指导作用。The exchange interaction between the in-plane/ perpendicular exchange-coupled double-layer (ECDL) magneto-optical films is the key factor to realize center-aperture-detection type magnetically induced super resolution (CAD-MSR). In this paper, the changes of the magnetization orientation profiles with the magnetic parameters (saturation magnetization, effective anisotropy, and exchange constant) have been calculated from a variational method of the magnetic energies in a continuum. The results show that with the temperature rising, it is better for the planar layer and the perpendicular layer to have decreased and increased saturation magnetization, respectively. The calculation results will be very helpful to further experiments.

关 键 词：磁光存储 中心孔探测型磁超分辨 交换耦合双层膜 磁化方向 

分 类 号：O484.43[理学—固体物理]